Images for illustrative purposes
<%=manufacture1 %> Logo FREE Delivery on orders over €250

10 Available to Ship
Order within 6Hrs 15Mins for: FREE Delivery (8 Jun or 9 Jun)

1099.76 Incl Vat
Bulk Pricing from €1066.77 Bulk Pricing
Qty.
10
50
Price
€1077.76
€1066.77

Overview

Range/Series Overview


IMPORTANT: This Range/Series overview section describes the range of which this product belongs. Features of different versions might be mentioned and may not apply to the specific product on this page. Please view Specs for specification of product.

The Samsung 990 PRO solid state drive combines high capacity storage, rapid data transfer speeds, and advanced security features into a reliable and efficient storage solution. With a 4 TB capacity, it offers ample space for large digital libraries, while the PCI Express 4.0 x4 (NVMe) interface ensures swift data access and transfer speeds of up to 7450 MBps read and 6900 MBps write. Advanced security is provided through 256-bit AES hardware encryption, protecting sensitive data against unauthorized access. Additionally, features like Dynamic Thermal Guard protection and low power consumption modes ensure the drive operates efficiently and safely, making it an ideal choice for demanding applications and multitasking environments.


Specification Summary

Product Description
Samsung 990 PRO MZ-V9P4T0BW - SSD - 4 TB - PCIe 4.0 x4 (NVMe)
Type
Solid state drive - internal
Capacity
4 TB
Hardware Encryption
Yes
Encryption Algorithm
256-bit AES
NAND Flash Memory Type
Multi-level cell (MLC)
Form Factor
M.2 2280
Interface
PCIe 4.0 x4 (NVMe)
Features
Samsung V-NAND 3bit MLC Technology, NVM Express (NVMe) 2.0, 4 GB Low Power DDR4 SDRAM Cache, TRIM support, Garbage Collection technology, Device Sleep support, Dynamic Thermal Guard protection, S.M.A.R.T.
Dimensions (WxDxH)
22 mm x 80 mm x 2.3 mm
Weight
9 g

Specifications

EAN / GTIN:
8806094947205
General
Device Type
Solid state drive - internal
Capacity
4 TB
Hardware Encryption
Yes
Encryption Algorithm
256-bit AES
NAND Flash Memory Type
Multi-level cell (MLC)
Form Factor
M.2 2280
Interface
PCIe 4.0 x4 (NVMe)
Features
Samsung V-NAND 3bit MLC Technology, NVM Express (NVMe) 2.0, 4 GB Low Power DDR4 SDRAM Cache, TRIM support, Garbage Collection technology, Device Sleep support, Dynamic Thermal Guard protection, S.M.A.R.T.
Width
22 mm
Depth
80 mm
Height
2.3 mm
Weight
9 g
Performance
Internal Data Rate
7450 MBps (read) / 6900 MBps (write)
Maximum 4KB Random Write
1550000 IOPS
Maximum 4KB Random Read
1600000 IOPS
Reliability
MTBF
1,500,000 hours
Expansion & Connectivity
Interfaces
PCI Express 4.0 x4 (NVMe)
Compatible Bay
M.2 2280
Power
Power Consumption
5.5 Watt (average) ¦ 55 mW (idle)
Software & System Requirements
Software Included
Samsung Magician Software
Miscellaneous
Compliant Standards
IEEE 1667
Environmental Parameters
Min Operating Temperature
0 °C
Max Operating Temperature
70 °C
Shock Tolerance (operating)
0.5 ms half-sine
Shock Tolerance (non-operating)
1500 g

Essential Bundles

Options


Reviews

Showcase