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Overview

Range/Series Overview


IMPORTANT: This Range/Series overview section describes the range of which this product belongs. Features of different versions might be mentioned and may not apply to the specific product on this page. Please view Specs for specification of product.

The Samsung 990 PRO solid state drive combines high-capacity, speed, and security to meet the needs of demanding applications and data security requirements. With a 1 TB capacity and PCI Express 4.0 x4 (NVMe) interface, it delivers exceptional read and write speeds up to 7450 MBps and 6900 MBps, respectively. This SSD is designed for durability and reliability, featuring Dynamic Thermal Guard protection to prevent overheating and a shock and vibration tolerance that ensures your data is protected. Advanced 256-bit AES hardware encryption keeps your data secure, making it an ideal choice for professionals and enthusiasts seeking performance and security. Additionally, its efficient power management, including an auto garbage collection algorithm and sleep mode, ensures that power consumption is minimized without sacrificing performance. Whether for gaming, content creation, or computing tasks, the Samsung 990 PRO SSD offers a comprehensive solution that combines speed, capacity, and security.


Specification Summary

Product Description
Samsung 990 PRO MZ-V9P1T0GW - SSD - 1 TB - PCIe 4.0 x4 (NVMe)
Type
Solid state drive - internal
Capacity
1 TB
Integrated Heatsink
Yes
Hardware Encryption
Yes
Encryption Algorithm
256-bit AES
NAND Flash Memory Type
Multi-level cell (MLC)
Form Factor
M.2 2280
Interface
PCIe 4.0 x4 (NVMe)
Features
1 GB Low Power DDR4 SDRAM Cache, Samsung V-NAND 3bit MLC Technology, Auto Garbage Collection Algorithm, Dynamic Thermal Guard protection, sleep mode, NVMe 2.0, S.M.A.R.T.
Dimensions (WxDxH)
24.3 mm x 80 mm x 8.2 mm
Weight
28 g
Manufacturer Warranty
5-year warranty

Specifications

EAN / GTIN:
8806094594645
General
Device Type
Solid state drive - internal
Capacity
1 TB
Hardware Encryption
Yes
Encryption Algorithm
256-bit AES
NAND Flash Memory Type
Multi-level cell (MLC)
Integrated Heatsink
Yes
Form Factor
M.2 2280
Interface
PCIe 4.0 x4 (NVMe)
Features
1 GB Low Power DDR4 SDRAM Cache, Samsung V-NAND 3bit MLC Technology, Auto Garbage Collection Algorithm, Dynamic Thermal Guard protection, sleep mode, NVMe 2.0, S.M.A.R.T.
Width
24.3 mm
Depth
80 mm
Height
8.2 mm
Weight
28 g
Performance
Internal Data Rate
7450 MBps (read) / 6900 MBps (write)
Maximum 4KB Random Write
1550000 IOPS
Maximum 4KB Random Read
1200000 IOPS
Reliability
MTBF
1,500,000 hours
Expansion & Connectivity
Interfaces
PCI Express 4.0 x4 (NVMe)
Compatible Bay
M.2 2280
Power
Power Consumption
5.4 watt (read) ¦ 5 watt (write) ¦ 50 mW (idle) ¦ 5 mW (L1.2 mode)
Software & System Requirements
Software Included
Samsung Magician Software
Miscellaneous
Compliant Standards
IEEE 1667
Package Details
Box
Manufacturer Warranty
Service & Support
Limited warranty - 5 years / 600 TBW
Environmental Parameters
Min Operating Temperature
0 °C
Max Operating Temperature
70 °C
Min Storage Temperature
-40 °C
Max Storage Temperature
85 °C
Humidity Range Operating
5 - 95% (non-condensing)
Shock Tolerance (non-operating)
1500 g
Vibration Tolerance (non-operating)
20 g @ 20-2000 Hz

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