Device Type
Solid state drive - internal
NAND Flash Memory Type
3D triple-level cell (TLC)
Interface
PCIe 4.0 (NVMe)
Features
176-layer NAND technology, Secure Execution Environment, CMOS-under-array (CuA), NAND Block Erase, Digitally Signed Firmware, Power Loss Protection (PLP), Secure Boot
Drive Writes Per Day (DWPD)
3
Internal Data Rate
6800 MBps (read) / 1400 MBps (write)
4KB Random Read
530000 IOPS
4KB Random Write
145000 IOPS
Non-Recoverable Errors
1 per 10^17
Interfaces
1 x U.3 PCIe 4.0 (NVMe)
Power Consumption
12.1 Watt (sequential read) ¦ 16.6 Watt (sequential write)
Service & Support
Limited warranty - 5 years
Min Operating Temperature
0 °C
Max Operating Temperature
70 °C