Device Type
Solid state drive - internal
NAND Flash Memory Type
3D triple-level cell (TLC)
Interface
PCIe 4.0 x4 (NVMe)
Features
NVM Express (NVMe) 1.4, 176-layer NAND technology, CMOS-under-array (CuA), Data Path Protection, Power Loss Protection (PLP), Secure Execution Environment
Drive Writes Per Day (DWPD)
1
Drive Class
Enterprise, Read Intensive
Internal Data Rate
6800 MBps (read) / 5000 MBps (write)
4KB Random Read
1000000 IOPS
4KB Random Write
180000 IOPS
Non-Recoverable Errors
1 per 10^17
Interfaces
1 x PCI Express 4.0 x4 (NVMe)
Compatible Bay
E1.S 5.9mm
Power Consumption
12 Watt (sequential read) ¦ 14 Watt (sequential write)
Service & Support
Limited warranty - 5 years
Min Operating Temperature
0 °C
Max Operating Temperature
70 °C