Device Type
Solid state drive - internal
NAND Flash Memory Type
3D triple-level cell (TLC)
Interface
PCIe 4.0 (NVMe)
Features
176-layer NAND technology, Secure Execution Environment, CMOS-under-array (CuA), NAND Block Erase, Digitally Signed Firmware, Power Loss Protection (PLP), Secure Boot
Drive Writes Per Day (DWPD)
1
Internal Data Rate
5000 MBps (read) / 2400 MBps (write)
4KB Random Read
735000 IOPS
4KB Random Write
120000 IOPS
Non-Recoverable Errors
1 per 10^17
Interfaces
1 x PCI Express 4.0 (NVMe) - M.2 Card
Power Consumption
8 Watt (sequential read) ¦ 7.9 Watt (sequential write)
Service & Support
Limited warranty - 5 years
Min Operating Temperature
0 °C
Max Operating Temperature
70 °C